2009-12-01 rev. 2.5 page 1 SPP24N60C3 cool mos? power transistor v ds @ t jmax 650 v r ds(on) 0.16 ? i d 24.3 a feature ? new revolutionary high voltage technology ? worldwide best r ds(on) in to 220 ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitances ? improved transconductance p g -to220-3-1 type package ordering code SPP24N60C3 p g -to220-3-1 q67040-s4639 marking 24n60c3 maximum ratings parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d 24.3 15.4 a pulsed drain current, t p limited by t j ma x i d p uls 72.9 avalanche energy, single pulse i d = 10 a, v dd = 50 v e as 780 mj avalanche energy, repetitive t ar limited by t jmax 1 ) i d = 24.3 a, v dd = 50 v e ar 1 avalanche current, repetitive t ar limited by t j ma x i ar 24.3 a gate source voltage static v gs 20 v gate source voltage ac (f >1hz) v gs 30 power dissipation, t c = 25c p tot 240 w operating and storage temperature t j , t st g -55... +150 c reverse diode dv/dt dv/dt 15 v/ns 4)
2009-12-01 rev. 2.5 page 2 SPP24N60C3 maximum ratings parameter symbol value unit drain source voltage slope v ds = 480 , i d = 24.3 , t j = 125 c d v /d t 50 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 0.52 k/w thermal resistance, junction - ambient, leaded r thja - - 62 soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s t sold - - 260 c electrical characteristics, at t j=25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 600 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =24.3a - 700 - gate threshold voltage v gs(th) i d =1200 ? , v gs = v ds 2.1 3 3.9 zero gate voltage drain current i dss v ds =600v, v gs =0v, t j =25c, t j =150c - - 0.1 - 1 100 a gate-source leakage current i gss v gs =20, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =15.4a, t j =25c t j =150c - - 0.14 0.34 0.16 - ? gate input resistance r g f =1mhz, open drain - 0.66 -
2009-12-01 rev. 2.5 page 3 SPP24N60C3 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. transconductance g fs v ds 2* i d * r ds(on)max , i d =15.4a - 21.5 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 3000 - pf output capacitance c oss - 1000 - reverse transfer capacitance c rss - 60 - effective output capacitance, 2) energy related c o(er) v gs =0v, v ds =0v to 480v - 141 - pf effective output capacitance, 3) time related c o(tr) - 224 - turn-on delay time t d(on) v dd =380v, v gs =0/10v, i d =24.3a, r g =3.3 ? - 13 - ns rise time t r - 21 - turn-off delay time t d(off) - 140 - fall time t f - 14 - gate charge characteristics gate to source charge q gs v dd =480, i d =24.3a - 12.7 - nc gate to drain charge q gd - 45.8 - gate charge total q g v dd =480v, i d =24.3a, v gs =0 to 10v - 104.9 135 gate plateau voltage v (plateau) v dd =480v, i d =24.3a - 5 - v 1 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 2 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 3 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . 4 isd<=id, di/dt<=200a/us, vdclink=400v, vpeak 2009-12-01 rev. 2.5 page 4 SPP24N60C3 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 24.3 a inverse diode direct current, pulsed i sm - - 72.9 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =480v, i f = i s , d i f /d t =100a/s - 600 - ns reverse recovery charge q rr - 13 - c peak reverse recovery current i rrm - 70 - a peak rate of fall of reverse recovery current di rr / dt - 1400 - a/s typical transient thermal characteristics symbol value unit symbol value unit typ. typ. thermal resistance r th1 0.006524 k/w r th2 0.013 r th3 0.025 r th4 0.096 r th5 0.117 r th6 0.053 thermal capacitance c th1 0.0004439 ws/k c th2 0.001662 c th3 0.002268 c th4 0.006183 c th5 0.014 c th6 0.104 external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t)
2009-12-01 rev. 2.5 page 5 SPP24N60C3 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 20 40 60 80 100 120 140 160 180 200 220 w 260 SPP24N60C3 p tot 2 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 3 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s t p -4 10 -3 10 -2 10 -1 10 0 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 4 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 4 8 12 16 20 v 26 v ds 0 10 20 30 40 50 60 70 80 a 100 i d vgs = 20v vgs = 7.5v vgs = 7v vgs = 6.5v vgs = 6v vgs = 5.5v vgs = 5v vgs = 4.5v vgs = 4v
2009-12-01 rev. 2.5 page 6 SPP24N60C3 5 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 4 8 12 16 20 v 26 v ds 0 5 10 15 20 25 30 35 40 a 50 i d vgs = 20v vgs = 6.5v vgs = 6v vgs = 5.5v vgs = 5v vgs = 4.5v vgs = 4v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 5 10 15 20 25 30 35 40 a 50 i d 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ? 1 r ds(on) vgs = 4v vgs = 4.5v vgs = 5v vgs = 5.5v vgs = 6v vgs = 6.5v vgs = 20v 7 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 15.4 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ? 1 SPP24N60C3 r ds(on) typ 98% 8 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 1 2 3 4 5 6 7 8 v 10 v gs 0 10 20 30 40 50 60 70 80 a 100 i d tj = 25c tj = 150c
2009-12-01 rev. 2.5 page 7 SPP24N60C3 9 typ. gate charge v gs = f ( q gate ) parameter: i d = 24.3 a pulsed 0 20 40 60 80 100 120 140 nc 170 q gate 0 2 4 6 8 10 12 v 16 SPP24N60C3 v gs 0.2 v ds max 0.8 v ds max 10 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a SPP24N60C3 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 11 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 4 8 12 16 20 a 28 i ar t j (start) =125c t j (start) =25c 12 avalanche energy e as = f ( t j ) par.: i d = 10 a, v dd = 50 v 25 50 75 100 c 150 t j 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 mj 0.9 e as
2009-12-01 rev. 2.5 page 8 SPP24N60C3 13 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 540 560 580 600 620 640 660 680 v 720 SPP24N60C3 v (br)dss 14 avalanche power losses p ar = f ( f ) parameter: e ar =1mj 10 3 10 4 10 5 10 6 hz f 0 200 400 600 w 1000 p ar 15 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 400 v 600 v ds 0 10 1 10 2 10 3 10 4 10 5 10 pf c ciss coss crss 16 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 400 v 600 v ds 0 4 8 12 16 20 j 28 e oss
2009-12-01 rev. 2.5 page 9 SPP24N60C3 definition of diodes switching characteristics
2009-12-01 rev. 2.5 page 10 SPP24N60C3 pg-to-220-3-1
2009-12-01 rev. 2.5 page 11 SPP24N60C3
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